Abstract
This article focuses on studying the dependence of the thermal conductivity of a semiconducting medium on temperature in context of photothermal transport process and variable thermal conductivity, chosen to be linear function in temperature. The effect of the initial magnetic field is introduced in the problem governing equations with the two-temperature theory. The complete solution in one dimension is obtained using Laplace transform technique. The thermal heating ramp type and mechanical load throughout the elastic-photothermal excitation are considered in the problem boundary conditions. Some physical fields are obtained by using numerical inversion of the Laplace transform and Riemann-sum approximation method. The thermo-dynamical temperature, conductive temperature, displacement, strain, normal stress and carrier density are discussed and shown graphically with some comparisons.
Highlights
In material science the variable thermal conductivity which depends on temperature is very important and has many applications in the nature
Youssef[26] used the model of two temperature theory in generalized thermoelasticity which show that the two temperature theory can differentiates between the wave propagation of the temperature, that comes from heat conduction temperature and that which comes from the thermodynamics temperature
In this article we study the dependence of the variable thermal conductivity on temperature
Summary
Semiconductor elastic The Maxwell’s equations medium under the influence of constant initial magnetic with linearized electromagnetism slowly moving medium are: field,. (I) The plasma and thermal distribution coupled equation takes the form:. The constants μ and λ are Lame’s constants of, ρ is the density and the absolute thermo-dynamic temperature is T0, γ is the volume thermal expansion, αT (γ = (3λ + 2 μ)αT) is the coefficient of the linear thermal expansion, the specific heat of the elastic material is Ce, δn = (2 μ + 3λ)dn is the deformation potential difference, K ρCe k is the diffusivity, K represents the thermal conductivity in general case and dn is the Figure 12. Considering the thermal conductivity of the semiconductor elastic material K can be expressed in a linear form of thermo-dynamical temperature as: K(T ) = K0(1 + K1T ),. Taking in consideration the linearity of the problem and following the same manner Eqs (22) and (23) can be written in the following approximate form:
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