Abstract
This letter develops a thermally stable micromachined AlGaN/GaN high electron mobility transistor (HEMT) on an Si substrate with an air-bridged heat redistribution layer design. After removal of the Si substrate beneath the HEMT, a significant breakdown voltage improvement was observed. The drain and source terminals were arranged as the matrix type. The 3 μm-thick Au was adopted for terminals connection and current redistribution layer of the proposed power cell. Compared with the traditional multi-fingers layout, the current density was doubled. In addition, the self-heating phenomenon of power cell was also suppressed by the removal of the substrate and air-bridged matrix layouts.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
