Abstract
The effect of plasma processing on the transient enhanced diffusion of implanted boron in silicon is presented. Thermally oxidised silicon wafers were first etched by plasma and subsequently implanted with boron, with energies ranging from 3 to 20 keV and a dose of 1/spl times/10/sup 13//cm/sup 2/. Secondary ion mass spectrometry measurements of the boron profiles in plasma processed samples reveal a strong reduction of the transient diffusion after rapid thermal annealing, with respect to the corresponding not etched samples. The suppression of the transient enhanced diffusion is explained in terms of trapping effects, occurring between the dislocations induced by plasma bombardment and the point defects generated during the implant.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
