Abstract
We have developed novel analytical methods to predict laser-induced, non-linear thermal effects in semiconductors. Equations based on energy balance considerations were used for the estimation of melt depths, surface temperatures and maximum solidification velocities of semiconductors exposed to nanosecond laser pulses. The effect of laser pulse duration and fluence on these parameters was displayed graphically. Analytical results were compared with detailed numerical solutions and experimental values where available. Good agreement between analytical and numerical calculations was observed, thus suggesting the universal application of this method to the estimation of non-linear thermal effects of laser-irradiated materials.
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