Abstract
We present a novel method to characterize the internal quantum efficiency and internal optical loss of semiconductor lasers. Its basic concept is studying the dependence of the external quantum efficiency on the mirror reflectivity. This method is very different from the conventional one, which focuses on the external quantum efficiency as a function of cavity length. Our method has great advantages, such as the capability of measuring the internal quantum efficiency and optical loss of a single laser diode, which is intrinsically impossible by the conventional method.
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