Abstract
We demonstrate a novel method to fabricate an axial p–n junction inside <111> oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration ~1018cm−3), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 × 1019 cm−3. Electrical measurements of individually contacted nanowires showed excellent diode characteristics and ideality factors close to 2. We think that this value of ideality factors arises out of a high rate of carrier recombination through surface states in the native oxide covering the nanowires.
Highlights
In order to make use of silicon nanowires (Si NWs) [1] in nano-devices, selective doping to form p–n junctions or p and n wells is a necessity
We demonstrate a novel method to fabricate an axial p–n junction inside \111[ oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping
It has been observed that a pure in-situ doping to fabricate an axial junction may result in unwanted lateral doping [6] due to unavoidable dopant incorporations through the NW sidewalls by vaporsolid (VS) growth
Summary
In order to make use of silicon nanowires (Si NWs) [1] in nano-devices, selective doping to form p–n junctions or p and n wells is a necessity. Abstract We demonstrate a novel method to fabricate an axial p–n junction inside \111[ oriented short vertical silicon nanowires grown by molecular beam epitaxy by combining ion implantation with in-situ doping. The lower halves of the nanowires were doped in-situ with boron (concentration *1018 cm-3), while the upper halves were doubly implanted with phosphorus to yield a uniform concentration of 2 9 1019 cm-3.
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