A novel method to fabricate on-chip ultra-high-Q microtoroid resonators

Abstract

Fabricating an optical microtoroid with ultra-high quality factor is an indispensable procedure both for scientific research and engineering. Here, HF/HNO3 wet etching is specially tailored to form silicon pillars for ultra-high quality factor microtoroids instead of xenon difluoride (XeF2) or reactive ion etching (RIE) methods. This is a low-cost, easily maintained and time-saving method. The method uses a very simple etching device and is robust to temperature variations and humidity changes at room temperature(20–25 °C). Anisotropy in isotropic HF/HNO3 etching, which may limit the quality factor, is minimized in the experiment. Quality factor dependence on silicon orientation is experimentally investigated and theoretically explained with group theory, which shows that [111] oriented silicon wafers are superior to [100] and [110] in the wet etching method. The maximum quality factor observed at 1550 nm waveband in the experiment is 1.05 × 108. We believe this technique will have great influence both on laboratory and future production use.