A novel method of tuning the properties of microwave dielectric resonators

Abstract

Dielectric resonators (DRs) with positive temperature variation of resonant frequency ( τ f) has been stacked with resonators with negative τ f. The stack acted as a single resonator. The τ f of the resultant stack depends on the volume fraction of the positive τ f and negative τ f DR materials. The τ f can be tuned to 0 or to a desired value by adjusting the volume fraction of the positive and negative τ f materials. The dielectric constant and quality factor also change depending on the volume fraction of the two different DR materials. The experiment is performed with varying volume fractions of Ba 5Nb 4O 15 as the positive τ f DR and Sr(Y 1/2Nb 1/2)O 3 and 5ZnO–2Nb 2O 5 as the negative τ f DR materials. The DR material in the bottom of the stack has greater influence on the τ f of the resultant stacked resonator.