Abstract
A novel method of intrinsic parameters extraction for RF LDMOS transistors is proposed in this paper. This method uses the relationship of the two-port parameters between Cold-FET and Hot-FET to extract the intrinsic parameters directly without extracting the extrinsic parameters for RF LDMOS. It achieves a good match between the simulated and measured S-parameters in the frequency range over from 0.1 to 5 GHz. Compared with traditional extracting strategy, the proposed method is easier to implement, and the results is more accurate.
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