Abstract
A new method of fabricating Te TFTs with high reproducibility is described. An adequate thickness of the Te layer appropriate to good transistor action was obtained by aging the evaporated TFTs at 70-80°C for several hours in normal atmosphere. The deposited Te films were characterized by measuring the temperature dependence of the conductivity, Hall mobility and ESCA. The results suggest that the aging process produces a layer of Te oxide on the surface and that the residual part is a semiconducting film of appropriate thickness, giving rise to the good transistor characteristics. After the aging, passivation by SiOx or Al2O3 evaporation was carried out, allowing the transistors to maintain operation for one year.
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