Abstract
A novel method for the preparation of III–V semiconductor has been provided in this paper. At room temperature, InP nanocrystals with diameter of ≈9 nm were successfully obtained under high-intensity ultrasonic irradiation for 4 h from the reaction of InCl 3·4H 2O, yellow phosphorus and KBH 4 in the mixed solvents of ethanol and benzene. Changing some parameters can effectively control the size of the products and possible explanations were offered. The products were characterized by X-ray powder diffraction, transmission electron microscope and electron diffraction pattern. The ultrasonic irradiation and the solvents are both important in the formation of the product.
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