Abstract
AbstractLow temperature (≤400°C) growth of polycrystalline silicon (poly-Si) is carried out using plasma-enhanced chemical vapour deposition. After an initial preparation step poly-Si was grown on the substrates. Optical band gap studies of the poly-Si films have been correlated to hydrogen content of the films as well as to their photoconductivity. Furthermore, the suitability of these films for use as information storage materials for future generation 3-D flash memory devices is investigated using capacitance-voltage (C-V) measurements via metal-insulator-semiconductor device structures. C-V analysis indicates strong charge storage behavior for the poly-Si films.
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