Abstract
A novel method for fabricating nanoimprint lithography (NIL) molds for T-shaped gates(T-gates) for high speed transistors is proposed and demonstrated. This method uses NIL,low pressure chemical vapor deposition and reactive ion etching processes, and avoids costlyelectron beam lithography and high accuracy alignment technology. Using the T-gatenanoimprint molds fabricated by this novel method, T-gates with a footprint as small assub-16 nm were achieved. This method can be extended to fabricate a broad range of 3Dnanostructures.
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