Abstract
A new infrared (IR) monitoring system has been developed for the detection of organic contaminants on 300 mm silicon wafer surfaces with non-contact, non-destructive, high sensitivity, and real-time capability. IR propagates through the wafer in which the light is internally reflected about 600 times. This enables us to detect an organic contamination on the wafer surface with a sensitivity of below 1/spl times/10/sup 11/ carbon atoms/cm/sup 2/. We demonstrate its performance by monitoring the decomposing process of dioctyl-phthalate (DOP) on the wafer surface by ultraviolet (UV)/ozone cleaning.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
