Abstract
This work presents a novel hybrid packaging structure for high-temperature SiC power modules that combines the benefits of both the wirebond structure and the planar structure. With the hybrid structure, the power modules can achieve the same footprint and similar parasitics, but much easier fabrication process and more reliable top-side interconnections, compared with regular planar structures. The new structure and its fabrication process are presented and a prototype module is built based on SiC JFET. Detailed comparisons are also conducted between the hybrid, planar, and wirebond structures. The results reveal the better performances of the hybrid structure in smaller parasitics than the wirebond structure, and easier fabrication than the planar structure. Finally, a multiple chips hybrid structure power module is built and tested in high temperature.
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