A novel hot-electron transistor employing superconductor base

Abstract

A design and preliminary experiments on a new monolithic hot-electron transistor employing superconductor-base (Super-HET) were demonstrated. A prepared device comprising n+-GaAs / Nb (200 A) / α-InSb / Au multiple-layer exhibited the common-base current amplification factor as high as 0.8 at the liquid helium temperature. The theoretical calculation and Monte Carlo simulation predicted a higher transfer efficiency (96%) as well as the ultra-fast (femto-second order) data rate processing of our Super-HETs. The NbN epitaxial growth on semiconductor was studied and successfully achieved by introducing 5A MgO buffer layer at the interface.