Abstract
Organic light-emitting devices (OLEDs) with the hole-blocking layer NaF between the α-naphthylphenyliphenyl diamine and ITO were fabricated using a vacuum evaporation method. Compared to the different thickness of the hole-blocking layer, the OLEDs with the 1.0 nm thickness layer showed the maximum efficiency. The enhancements in efficiency were resulted from an improved balance of hole and electron injections. After comparing different hole-blocking layer density, NaF was a good candidate for the hole-blocking layer, and 1.0-nm thickness NaF layer showed better operational durability and life.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
