Abstract
A novel high-/spl kappa/ silicon-oxide-nitride-oxide-silicon (SONOS)-type memory using TaN/Al/sub 2/O/sub 3//Ta/sub 2/O/sub 5//HfO/sub 2//Si (MATHS) structure is reported for the first time. Such MATHS devices can keep the advantages of our previously reported TaN/HfO/sub 2//Ta/sub 2/O/sub 5//HfO/sub 2//Si device structure to obtain a better tradeoff between long retention and fast programming as compared to traditional SONOS devices. While at the same time by replacing hafnium oxide (HfO/sub 2/) with aluminum oxide (Al/sub 2/O/sub 3/) for the top blocking layer, better blocking efficiency can be achieved due to Al/sub 2/O/sub 3/'s much larger barrier height, resulting in greatly improved memory window and faster programming. The fabricated devices exhibit a fast program and erase speed, excellent ten-year retention and superior endurance up to 10/sup 5/ stress cycles at a tunnel oxide of only 9.5 /spl Aring/ equivalent oxide thickness.
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