Abstract
Based on a traditional band gap voltage reference generated by summing its proportional-to-absolute temperature (PTAT) and base-emitter voltages, a first-order band gap reference is designed. The circuit possesses a low temperature coefficient output with a high power supply rejection ratio (PSRR). Then, a novel two-section band gap reference topology with higher-order curvature compensation is applied for improving the temperature coefficient performance. With the Cadence tool, the TSMC 0.35 SiGe technology and device models, the simulated temperature coefficient of first-order band gap voltage reference is 9.54 ppm/°C within the wide temperature range of-55~125°C. Under higher-order curvature compensation, the temperature coefficient of band gap reference can be reduced to 0.45 ppm/°C.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
