A Novel High-Density and Low-Power Ternary Content Addressable Memory Design Based on 3D NAND Flash

H Z Yang,Y C Xiang,B Gao,J F Kang,R Z Han,P Huang,X Y Liu,L F Liu,Y Feng,J Z Chen

doi:10.1109/snw50361.2020.9131657

A Novel High-Density and Low-Power Ternary Content Addressable Memory Design Based on 3D NAND Flash

H Z Yang, Y C Xiang + Show 8 more

https://doi.org/10.1109/snw50361.2020.9131657

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Publication Date: Jun 1, 2020

Citations: 4

Affiliation: Institute of Microelectronics, Tsinghua University, Peking University, Shandong University

#Ternary Content Addressable Memory Design #Ternary Content Addressable Memory + Show 8 more

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Abstract

A novel ternary content addressable memory (TCAM) design based on 3D NAND Flash is proposed, in which two adjacent flash cells consist of one TCAM cell. HSPICE simulations show that the proposed TCAM has the ultra-low energy consumption of 0.298 fJ/bit/search for a 64-bit word and the cell density with 96-layer 3D NAND is reduced ~582 times compared to the conventional CMOS-based TCAMs.

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