Abstract
A shallow-trenched Lateral Double-Diffused MOSFET with folded drift region (FD LDMOS) is proposed in this paper. The new structure divides the drift region into two parts. The left side is introduced in a shallow trench, and the right side is used to take advantage of the buried oxide bump layer. The new structure optimizes the lateral and vertical electric fields simultaneously. The self-adaptation of the drift region improves the doping concentration (Ndd), reducing specific on-resistance (Ron,sp) and parasitic capacitance. The simulation results show that compared with the conventional LDMOS (Con. LDMOS), the breakdown voltage (BV) has increased by 53%, and the figure of merit (FOM) has increased by 173.4%; the power-added efficiency (PAE) near the P3dB operating point is increased from 44.43% to 63.67% at the frequency of 1.2 GHz.
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