Abstract
ZnAl2O4 is a well-known wide band gap compound semiconductor (Eg=3.8eV), ceramic, opto-mechanical, anti-thermal coating in aero-space vehicles and UV optoelectronic devices. A novel method for the growth of single crystals of a ternary oxide material was developed as a fruit of a long term work. Material to be grown as metal incorporated single crystal was taken as precursor and put into a bath containing acid as reaction speed up reagent (catalyst) as well as solvent with a metal foil as cation scavenger. Using this method, ZnAl2O4 crystals having hexagonal facets are prepared from a single optimized bath. Structural and compositional properties of crystals were studied using Philips, Xpert - MPD: X-ray diffractometer and Philips, ESEM-TMP + EDAX. Thus technique was found to be a new low cost and advantageous method for growth of single crystals of ternary oxide a material. We hope that these data be helpful either as a scientific or technical basis in material processing. Dedicated to Prof. P. Ramasamy © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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