A novel graphene nanoribbon field effect transistor for integrated circuit design

Abstract

In this work, we present a novel structure of Graphene NanoRibbon Field-Effect Transistor (GNR FET) to reduce short channel effects. In this structure, two side metal gates with lower work-function than the main gate are used in a conventional double-gate (DG) GNR FET topology to provide virtual extensions to source/drain regions while these are biased constant, independent of the main gate. The proposed GNR FET structure improves drain-induced barrier lowering (DIBL), which can reduce the short-channel effects (SCE) in device performance such as on/off current ratio, off-state current and subthreshold slope to make it a more suitable configuration than the normal GNR FET for digital integrated circuit design.