Abstract
A GaAs metal-semi-insulating-p-n+ structure is described as a novel reach-through avalanche photodiode. The p and n+ layers are simultaneously obtained by heat treatment and liquid-phase epitaxy. The high field at the p - n+ depletion layer allows one to reach multiplication factors close to 104 without avalanche breakdown. Photoinjected electrons from the metal barrier can extend the photodetection range up to 1.6 μm for Sn Schottky barriers.
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