Abstract
A novel fin electron-hole bilayer tunnel field-effect transistor (FinEHBTFET) is proposed and investigated by simulation. In this structure, a narrow fin is placed at the middle of a conventional p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -i-n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> tunnel field-effect transistor, and two separate gates formed on left and right sides of the fin are used to control the channel. The FinEHBTFET achieves drive current when band-to-band tunneling happens between the bias-induced electron-hole bilayer at the two sides of the fin. The FinEHBTFET shows a high I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> /I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ratio more than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> , and an average SS of 3 mV/dec over three decades of drain current.
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