Abstract
This paper describes a fast and versatile system developed to measure indirectly the junction temperature of LDMOS transistors which can be easily adapted to other kind of devices. The system takes less than 20us to make the measurement, and the polarization for the self-heating of the device is user-selectable for the time and for the value of biasing. Furthermore, the system can be integrated with other stress system and be used to monitor the temperature of the device under test, in order to control an otherwise uncontrollable increase of device temperature.
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