Abstract
In the present work, we report a novel fabrication process for spiral inductor structures. The inductors were fabricated on insulator-filled and planarized five micron-deep islands made on silicon substrate which involved bulk micromachining. For comparison purposes, similar types of inductors were made on plain oxidized silicon wafers. Simulation has been carried out using CST microwave studio in which geometric parameters such as line width, spacing between traces, number of turns, the depth of the island and the separation between the underpass and the top spirals, the separation of the ground plane from outer inductor arm were studied. The parameters were extracted from the measurements carried out on the fabricated inductors using the conventional $$\pi$$?-model in Agilent ADS and a good fit has been obtained. The characterization results showed that the quality factors of the structures fabricated on the insulator-filled islands outperform the devices fabricated on just silicon wafer surface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
