Abstract
The Cu-Mn alloy films have been successfully fabricated by a novel chemical displacement process. The surface morphologies and displacement rate of Cu-Mn with pH values and temperatures are investigated in this paper. Furthermore, this chemical displacement is a selective deposition between Si and SiO2, this predominance can apply to self-formed metal layer. The chemical displacement process provides a solution to satisfy for 32 nm node Cu-Mn alloy self-formed barrier requirement.
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