A Novel Extensional Bulk Mode Resonator with Low Bias Voltages

Abstract

This paper presents a novel Π-shaped bulk acoustic resonator (ΠBAR) with low bias voltages. Concave flanges were coupled with straight beams to effectively enlarge the transduction area. A silicon-on-insulator(SOI)-based fabrication process was developed to produce nanoscale spacing gaps. The tether designs were optimized to minimize the anchor loss. With a substantially improved electromechanical coupling coefficient, the high-stiffness ΠBAR can be driven into vibrations with low bias voltages down to 3 V. The resonator, vibrating at 20 MHz, implements Q values of 3600 and 4950 in air and vacuum, respectively. Strategies to further improve the resonator performance and robustness were investigated. The resonator has promising IC compatibility and could have potential for the development of high-performance timing reference devices.