Abstract
A new E-SIMOX high voltage device structure with shielding trench (ST) and its breakdown mechanism with a self-adapted interface charge are proposed in this paper. Based on the full continuity principle of electric displacement, the interface charges enhance the vertical electric field of the buried oxide remarkably and reduce the vertical electric field of the Si layer, which shields the Si layer from the high electric field. The vertical electric field and breakdown characteristics are researched for different device structure parameters, with ST, using a 2D device simulator. The electric field of the buried oxide increases from below 100 V//spl mu/m to about 600 V//spl mu/m. This breaks through the limitation of breakdown voltage of normal SOI devices and expands the application field of SOI devices.
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