A novel end point detection technique for in situ development of photoresist

Abstract

The use of in situ measurements for development end point detection can drop process deviations caused by uncontrolled lithography parameters. Some of the process variations are temperatures, humidity, softbake time, process time delays between softbake and exposure, exposure parameters or developer temperature and normality. This paper will focus on an effort to identify process deviations from these parameters for different spray development processes on wafer tracks. We discuss the use of this end point detection techniques for process development and internal process automation.