Abstract

This work presents a time discretization strategy to estimate the current degradation of OLED devices in circuit-level simulation. An equivalent time point method is used to calculate degradation rate appropriately under dynamic bias conditions, and temperature effect due to ambient or device self-heating during operation is also included. Groups of OLEDs with various aging conditions are measured more than 1000 hours and the current attenuation (ΔI) of OLED is compared by the proposed methodology to verify the accuracy. Furthermore, the simulation results indicate our method could properly describe the current degradation and the bias voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OLED</sub> ) shift in pixel circuit under pulse amplitude modulation (PAM) or pulse width modulation (PWM) driving method, which is nearly impossible to be calculated with analytic solutions.

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