Abstract
Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors.
Highlights
It has taken few decades to search for materials and device designs for different types of sensors and field-effect transistors
Step 1: The film of 60 nm Si0.72 Ge0.28 was grown by using reduced pressure chemical vapor deposition (RPCVD) technique [35,36,37], and a 60 nm-thick SiO2 is grown on the silicon-germanium by plasma enhanced chemical vapor deposition(PECVD)
It is well known that self-limiting sequential reactions are the primary feature of atomic layer etching [38]
Summary
It has taken few decades to search for materials and device designs for different types of sensors and field-effect transistors. Nanowires (NWs) have offered an excellent platform for gas and bio sensing due to their nano-scale size compatibility to molecule size [1,2] One issue for this application is how to functionalize the surface of NWs to detect a specific gas molecule with good selectively. In such case, NW transistors could be designed where the carrier transport through the channel is affected and signaled in response to “absorption of” or “interaction with” the gas molecules. In these NW transistors, Materials 2020, 13, 771; doi:10.3390/ma13030771 www.mdpi.com/journal/materials
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