Abstract
Active gate drivers (AGDs) get popular by their capability to flexibly control the switching behavior of power transistor. State-of-the-art AGDs need to adopt extensive driving switches, resistors or additional voltage or current sources which significantly increase the cost, size and complexity of gate driver. To overcome this bottleneck, an enhanced inductor-based current source gate driver (ECSGD) with well controlled gate driving current and fast driving current transition is proposed in this paper. Driving current is controlled by switching between different resonant networks within a pre-settled hysteresis window to solve the poor gate driving current regulation limitation of conventional inductor-based current source gate driver. Driving current transition speed is also accelerated by internal supply voltage boosting function. The design prototype demonstrates the driving current control of 2A with hysteresis window of 0.3A. The driving current transition time is shortened by more than 30% with VD1 boosted from 15V to 25V. Hence, the ECSGD can be used as an AGD with simple structure, high control accuracy and fast response speed.
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