Abstract
ABSTRACT This paper describes a high-frequency shunt feedback amplifier. A new design procedure is presented based on practical design steps as well as theoretical aspects, such as sizing the transistor, stabilisation, and selecting the values of feedback elements. The amplifier is designed and fabricated using 0.15 μm GaAs technology. It operates in the 7–10 GHz frequency range, with a small signal gain of 11.5 ± 0.5 dB and input and output return losses of less than 6 dB and 7 dB, respectively. Furthermore, for 1 dB and 3 dB output compression points, the maximum measured values are 23.1 dBm and 23.9 dBm, respectively. Besides, the maximum measured value for Power Added Efficiency (PAE) for 1 dB output compression is 27.13% and 48.6% for 3 dB output compression. In addition, the measured Noise Figure (NF) in the frequency band of interest ranges from 3.7 to 4.1 dB. The chip area of the fabricated amplifier is 1.01 mm2.
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