A novel design on ultra-thin lateral-current-injection III–V on silicon with ultra-compact optical VIA for heterogeneous electronic–photonic integration

Abstract

A novel approach to integrate an ultra-thin and ultra-compact lateral-current-injection (LCI) III–V on silicon-on-insulator platform by direct wafer bonding technique is proposed and designed. The proposed LCI III–V on silicon platform has an ultra-thin thickness of 270 nm which is ~10 times thinner than the vertical current injection III–V bonded on silicon. It has a confinement factor in the 100 nm thick active region larger than 40 % for 1 µm wide III–V waveguide, which is the highest among all the other integration schemes proposed so far. An optical vertical interconnect access to transfer light efficiently between III–V and silicon layer is designed. The design of the shortest “Optical Via” of 4 µm which gives ~100 % coupling efficiency is presented.