Abstract
In recent, the low-power and high- speed memory is required because of this extensive use in the electronic portable equipments. The power consumption and speed are the major factor for memory design techniques. This paper presents design of the proposed circuit, and the implementation for proposed 6T SRAM with a Transmission gate and supply-gated technology. In this paper the comparative analysis on different parameters of conventional 6T SRAM, existing 6T SRAM and the proposed 6T SRAM are performed. This new approach can reduce the total power and total delay compared to conventional and existing 6T SRAM. All the experimental works are done by Microwind and DSCH 2.7 version software tool.
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