A Novel Deep Gate LDMOS Structure Using Double P-Trench to Improve the Breakdown Voltage and the On-State Resistance

Abstract

To increase the breakdown voltage and reduce the on-state resistance, a novel Lateral Double Diffused Metal Oxide Semiconductor (LDMOS) field-effect transistor is proposed in this paper. In the proposed structure, double P-trenches are inserted in the buried oxide under the source and drain regions. The proposed device is called as the double p-trench deep gate LDMOS (DPTDG-LDMOS). By optimizing the P-trenches, the electric field will be more uniform, and so the maximum breakdown voltage obtains. Our simulation results show that the breakdown voltage, on-state resistance, maximum temperature (TMAX), and figure of merit (FOM) for the DPTDG-LDMOS are improved in comparison with a conventional LDMOS.