Abstract
Here we report a novel composite material Cs4PW11O39Fe/Si(Cs4PW11Fe/Si), which was prepared by combination of chemical etching and hydrothermal method. This composite material displays a superior photoelectric performance. A transient photocurrent density of 0.4 mA cm−2 and a maximum surface photovoltage of 0.043 mV as well as an maximum IPCE of 80.8% were obtained, much higher than those of the pristine p-Si or Cs4PW11Fe. The solar cell device ITO/Cs4PW11Fe/p-Si/Ag presents a PCE of 1.36% with a Voc of 0.78 V and a Jsc of 1.27 mA cm−2 as well as a FF of 68.5%. The improvement of the photoelectric performance results from the “mastoid” structure on the surface of material and the formation of p-n heterojunction between n-Cs4PW11Fe and p-Si. The “mastoid” structure and p-n junction are favorable to increasing light absorption and facilitating photo-generated carriers's separation and transfer.
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