Abstract
A novel structure defect in epitaxial wurtzite GaN film is reported in this paper. It is observed as an isolated (112̄0) planar defect within one large perfect crystal area by high-resolution electron microscopy. By careful analysis of the experimental atomic image it is found that the atomic structure is composed of Ga–Ga and N–N like-atom bonds. It forms a segment of a high-energy boundary by theoretical considerations. The reason for the defect formation is explained from the mechanism of epitaxial film growth. The defect is considered an incipient (112̄0) edge dislocation.
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