Abstract
A novel photoluminescence (PL)-based measurement method for the surface recombination velocity, S, is presented. It consists of detailed measurement of the band-edge photoluminescence efficiency as a function of the excitation intensity, and its subsequent analysis by computer. The measurement principle and the computer analysis procedure are presented, as well as detailed discussion on the underlying recombination physics. As a demonstration, the new method is applied to various unpassivated and passivated Si wafers, giving the values of S under 1 sun condition of 3000 cm/s-50000 cm/s. It is also pointed out that the value of S is considerably reduced by concentrated sunlight. By this method, the value of S under device operation conditions as well as Nss distribution can be determined in a contactless and nondestructive fashion.
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