A novel concept for optoelectronic nanotransistor design

Abstract

Considering the new features and particular quantum properties of nanooptoelectronics components, the revision of the traditional analytical approach to model analytically is made indispensable. A novel approach leads to take into account quasi-virtual electrons trapped in nanometric space cells with high discontinuities of potential. Another strong difficulty to overcome is existing: the strong difference of scales between the wavelength of the focusing laser spot size (currently close to the micrometer range) and the nanostructures sizes (close to the nanometer range). A recent breakthrough in the studies of diffraction limits affords the possibility to produce a subwavelength light source with high transmission through arrays in metallic screen. Thanks to some recent works [T.W. Ebbesen, H.J. Lezec, H.F. Ghaemi, T. Thio, P.A. Wolff, Extraordinary optical transmission through subwavelength hole arrays, Nature 391 (1998) 667–669. A. Degiron, T.W. Ebbesen, The role of localized surface plasmon modes in the enhanced transmission of periodic subwavelength apertures, J. Opt. A: Pure Appl. Opt. (2005) S90–S96. J. Xu, T. Xu, J. Wang, Q. Tian, Design tips of nanoapertures with strong field enhancement and proposal of novel L-shaped aperture, Opt. Eng. 44(1) (2005)], we intend to consider the physical possibility of applications involving a violation of the Bethe diffraction law. With the aim to implement the generation of a photon–plasmon–polariton (SPPs) interaction [J. Xu, T. Xu, J. Wang, Q. Tian, Design tips of nanoapertures with strong field enhancement and proposal of novel L-shaped aperture, Opt. Eng. 44(1) (2005). J.-F. Eloy, Mise en évidence d’une anisotropie d’absorption multiphotonique dans des monocristaux organiques ‘HMX et RDX) et approche théorique, Réactivité et cinétique réactionnelle, Ann. Chim. Fr. 16 (1991) 1–39] liable to the physical conditions to generate this particular electromagnetic phenomenon, we conceived of a particular layout. This optoelectronics component is equipped with subwavelength apertures (typically 100nm of diameter) bored in a metallic (Ag or Cr) thin film screen to reduce drastically the focused laser beam spot in order to illuminate the photoconducting gap between two nanotubes (e.g. polycarbon walls).To master the main theoretical and technological difficulties, a new optoelectronic concept of nanotransistor is proposed. This system involves a metal-oxide-semiconductor field effect transistor (MOSFET) augmented with a nanoscale cell consisting of a ‘Coulombian box’ controlled by a laser photoconducting switch. In order to preserve the different electronic functions such as the potential barriers, the implementation of semirefractors [J.-F. Eloy, M.Y. Depeyrot, Nanometer range: a new theoretical challenge for microelectronics and optoelectronics, Microelectron. J. 37(7) (2006) 630–634] such as polycrystal diamond monolayers is commendable.