Abstract
Solar cells based on Cu(In,Ga)Se/sub 2/ were prepared replacing the 'standard buffer layer' CdS with a In/sub x/(OH,S)/sub y/ thin film. The film is deposited in a chemical bath (CBD) process using an aqueous solution containing InCl/sub 3/ and thioacetamide. X-ray photoemission spectroscopy measurements were performed in order to characterize the growth kinetics and the chemical composition. The influence of different concentrations of InCl/sub 3/ and thioacetamide in the solution on the electrical properties of the solar cells was studied by measuring the j-V characteristics and the spectral quantum efficiencies. Capacitance-voltage (C-V) measurements indicate that the high V/sub oc/ values of devices with the novel buffer layer are correlated with narrower space charge widths and higher effective carrier concentrations in the absorber materials. The achieved conversion efficiency of approximately 15% using the cadmium free In/sub x/(OH,S)/sub y/ buffer demonstrates the potential of this process as an alternative to the standard chemical bath deposition of CdS.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
