Abstract
In recent years, cesium lead halide quantum dots (CsPbX3 QDs) is emerging as a new generation of photoelectric functional materials. In this paper, CsPbBr3/Cs4PbBr6 composite perovskite quantum dots (PeQDs) embedded in borosilicate glass were prepared by traditional melting quenching and heat treatment process to prevent the degradation of quantum dots and improve the thermal stability of QDs. The crystallization mechanism of CsPbBr3/Cs4PbBr6 composite nanocrystal in borosilicate glass was discussed by changing the heat treatment condition. Excellent CsPbBr3/Cs4PbBr6 composite QDs in borosilicate glass with 61.2% photoluminescence quantum yield (PLQY) were obtained. By placing them under high-temperature and high-humidity (85 °C/RH 85%) and irradiation of Xenon lamp for 110 h, the PL intensity remains about 80% and 45%, respectively. The white laser diode (LD) displays a luminous efficiency of 78.98 lm/W with CIE coordinates of (0.3195, 0.3262) under the driving current of 90 mA.
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