Abstract
A novel structure is proposed to improve the matching characteristics of bipolar junction transistor (BJT) based on CMOS technology for high performance analog circuit applications. This paper includes the analysis of electrical and matching characteristics in collector current density (JC), base current density (JB) and current gain (β). Although the collector current density JC of the proposed structure is similar to that of the conventional structure, the base current density JB is lower than that of conventional structure, which results in higher current gain. The matching characteristics of the collector current density and the current gain of the proposed structure showed improvement of about 12.22% and 36.43%, respectively compared with the conventional structure.
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