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Abstract
Bi-directionally operated amplifiers enabling efficient utilization of transmission wavelengths are promising candidates in densely integrated photonic circuits for future cost-effective, power-efficient optical networks. Here, we demonstrate, for the first time, a broadband semiconductor optical amplifier (SOA) based on a novel chirped multilayered quantum dot (QD) structure, which is suitable for bi-directional amplification via the dual ground state (GS) emission spectrum. The fabricated QD SOA has achieved a maximum 3-dB gain bandwidth of 50 nm while retaining on-chip gain above 20 dB at both GS wavelengths. Under an optimum pumping current of 280 mA, the bi-directionally operated QD SOA has shown around 10 dB receiver sensitivity improvement in ultra-high-speed 100 Gbaud non-return-to-zero and 53.125 Gbaud four-level pulse amplitude modulation data transmission systems.
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