Abstract
A novel epitaxial step-flow growth mechanism is revealed in the growth of C 60 overlayers on Ge(100) and GaAs(110) surfaces using scanning tunneling microscopy. In contrast to the conventional step-flow growth mode, molecules attached to a substrate atomic step protrude well above its top edge and hence create an inverted step. This new step in turn acts as a nucleation site for subsequent growth over the upper terrace, and flows in the direction of ascending steps, in conjunction with the step flow on the lower terrace in the direction of descending steps. This bi-directional step-flow growth mode is a direct consequence of a large out-of-plane lattice mismatch, and thus should be common in the growth of large molecules or clusters on monoatomically stepped substrates.
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