A novel BaMg1.98Zn0.02V2O8 ceramic with low dielectric loss and good temperature stability for low temperature co-fired ceramic technology

Abstract

In this paper, a series of BaMg2-xZnxV2O8 (0.02 ≤ x ≤ 0.08) ceramic has been obtained by ionic substitution at the Mg-site of BaMg2V2O8 ceramics through the conventional solid-state reaction method. The relationship between the surface morphology and the microwave properties of ceramic samples was analyzed intensively. The results showed that the substitution of Mg2+ by an appropriate amount of Zn2+ can promote their densification, lower their sintering temperature, and reduce the dielectric loss of BaMg2V2O8 ceramics significantly. The BaMg1.98Zn0.02V2O8 ceramic exhibits microwave dielectric properties as εr ∼13.4, Q × f ∼ 178,760 GHz, τf ∼ -14.9 ppm/°C at the optimum sintering temperature (940 °C). This indicates that the ceramic prepared in this work, which combines low dielectric loss, good temperature stability, and low-temperature sintering ability, can be an ideal microwave dielectric material for low-temperature co-firing technology.