Abstract
In this paper, a 1200 V asymmetric trench SiC MOSFET with an embedded unipolar electron channel for enhanced reverse conduction performance is proposed and investigated by TCAD simulations. For the proposed device, a sidewall N-layer beneath the source-connected dummy gate serves as the reverse current path from the N+ source to the N- drift region. Due to a smaller potential barrier, the cut-in voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">cut-in</inf> ) of this path is lower than the PN body diode. Therefore, the intrinsic body diode is fully inactivated and the bipolar degradation is eliminated. Meanwhile, the gate to drain charge (Q <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GD</inf> ) and switching loss are reduced by using the split gate MOSFET structure. As a result, the proposed device has a smaller V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">cut-in</inf> of 0.94 V compared with 2.69 V of the conventional one. And the Q <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GD</inf> and switching loss are reduced by 34.8% and 30.1%, respectively.
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