Abstract
Abstract The growth of epitaxial cerium oxide films on CaF2(1 1 1)/Si(1 1 1) has been studied by XPS, UPS and LEED. Using CaF2 as an intermediate layer between the Si(1 1 1) substrate and cerium oxide, an ordered and fully-oxidised (1 1 1)-oriented CeO2 film was obtained from the very early stages of growth. The prepared CeO2/CaF2/Si(1 1 1) interfaces showed reasonable thermal stability when annealed in oxygen, although fluorine migration into the ceria was evident at high temperatures.
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